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Diodes Incorporated DMP2012SN-7 — Discrete Semiconductors

Diodes Incorporated DMP2012SN-7

MPNDMP2012SN-7
Active
$0.1164Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2012SN-7 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C900mA (Ta)
Power dissipation500mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs300mOhm @ 400mA, 4.5V
Input capacitance (Ciss) (Max) @ vds178.5 pF @ 10 V