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Diodes Incorporated DMP2010UFG-13 — Discrete Semiconductors

Diodes Incorporated DMP2010UFG-13

MPNDMP2010UFG-13
Active
$0.3174Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2010UFG-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C12.7A (Ta), 42A (Tc)
Power dissipation900mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 3.6A, 4.5V
Gate charge (Qg) (Max) @ vgs103 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3350 pF @ 10 V