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Diodes Incorporated DMP2008USS-13 — Discrete Semiconductors

Diodes Incorporated DMP2008USS-13

MPNDMP2008USS-13
Active
$0.3070Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2008USS-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C13A (Ta), 38A (Tc)
Power dissipation1.4W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs9mOhm @12A, 4.5V
Gate charge (Qg) (Max) @ vgs159 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6820 pF @ 10 V