Skip to main content
Diodes Incorporated DMP2007UFG-13 — Discrete Semiconductors

Diodes Incorporated DMP2007UFG-13

MPNDMP2007UFG-13
Active

MOSFET P-CH 20V 18A PWRDI3333

$0.8400Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2007UFG-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 40A (Tc)
Power dissipation2.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4621 pF @ 10 V