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Diodes Incorporated DMN4036LK3-13 — Discrete Semiconductors

Diodes Incorporated DMN4036LK3-13

MPNDMN4036LK3-13
Active

MOSFET N-CH 40V 8.5A TO252-3

$0.6000Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN4036LK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.5A (Ta)
Power dissipation2.12W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs36mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs9.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds453 pF @ 20 V