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Diodes Incorporated DMN4035LQ-7 — Discrete Semiconductors

Diodes Incorporated DMN4035LQ-7

MPNDMN4035LQ-7
Active

MOSFET N-CH 40V 4.6A SOT23

$0.4000Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN4035LQ-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4.6A (Ta)
Power dissipation720mW
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 4.3A, 10V
Gate charge (Qg) (Max) @ vgs12.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds574 pF @ 20 V