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Diodes Incorporated DMN4009LK3-13 — Discrete Semiconductors

Diodes Incorporated DMN4009LK3-13

MPNDMN4009LK3-13
Obsolete
$1.3100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN4009LK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta)
Power dissipation2.19W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs8.5mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2072 pF @ 20 V