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Diodes Incorporated DMN2992UFB4-7B — Discrete Semiconductors

Diodes Incorporated DMN2992UFB4-7B

MPNDMN2992UFB4-7B
Active

MOSFET BVDSS: 8V~24V X2-DFN1006-

$0.2500Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2992UFB4-7B specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C830mA (Ta)
Power dissipation380mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs990mOhm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.41 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds15.6 pF @ 16 V