DMN2990UDJ-7

Diodes Incorporated

Diodes Incorporated DMN2990UDJ-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2990UDJ-7 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C450mA
Power - max350mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-963
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs990mOhm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds27.6pF @ 16V
DMN2990UDJ-7
[ALLOC] verified
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