DMN2710UVQ-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.92A SOT563

Diodes Incorporated DMN2710UVQ-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2710UVQ-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C920mA (Ta)
Power - max500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.6nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds42pF @ 16V
DMN2710UVQ-7
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