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Diodes Incorporated DMN2710UTQ-7 — Discrete Semiconductors

Diodes Incorporated DMN2710UTQ-7

MPNDMN2710UTQ-7
Active

MOSFET BVDSS: 8V~24V SOT523 T&R

$0.4300Ref. price · indicative, final on quote
PackagingSOT-523
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2710UTQ-7 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C870mA (Ta)
Power dissipation320mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds42 pF @ 16 V