Diodes Incorporated DMN2600UFB-7
MPNDMN2600UFB-7
Active
MOSFET N-CH 25V 1.3A 3DFN
$0.3600Ref. price · indicative, final on quote
Packaging3-UFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1.3A (Ta) |
| Power dissipation | 540mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-UFDFN |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 350mOhm @ 200mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.85 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 70.13 pF @ 15 V |