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Diodes Incorporated DMN24H11DS-7 — Discrete Semiconductors

Diodes Incorporated DMN24H11DS-7

MPNDMN24H11DS-7
Active

MOSFET N-CH 240V 270MA SOT23 T&R

$0.4400Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN24H11DS-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage240 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C270mA (Ta)
Power dissipation750mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs11Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs3.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds76.8 pF @ 25 V