DMN2310UTQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

Diodes Incorporated DMN2310UTQ-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2310UTQ-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C1.2A (Ta)
Power dissipation290mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSOT-523
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs240mOhm @ 300mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds38 pF @ 10 V
DMN2310UTQ-7
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