Diodes Incorporated DMN2310UTQ-7
MPNDMN2310UTQ-7
Active
MOSFET BVDSS: 8V~24V SOT523 T&R
$0.4000Ref. price · indicative, final on quote
PackagingSOT-523
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1.2A (Ta) |
| Power dissipation | 290mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | SOT-523 |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 240mOhm @ 300mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 38 pF @ 10 V |