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Diodes Incorporated DMN2310UT-13 — Discrete Semiconductors

Diodes Incorporated DMN2310UT-13

MPNDMN2310UT-13
Active
$0.0592Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2310UT-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C1.2A (Ta)
Power dissipation290mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs240mOhm @ 300mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds38 pF @ 10 V