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Diodes Incorporated DMN2300UFD-7 — Discrete Semiconductors

Diodes Incorporated DMN2300UFD-7

MPNDMN2300UFD-7
Active
$0.1138Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2300UFD-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.21A (Ta)
Power dissipation470mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-UDFN
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs200mOhm @ 900mA, 4.5V
Gate charge (Qg) (Max) @ vgs2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds67.62 pF @ 25 V