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Diodes Incorporated DMN22M5UFG-13 — Discrete Semiconductors

Diodes Incorporated DMN22M5UFG-13

MPNDMN22M5UFG-13
Active
$0.3357Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN22M5UFG-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C24A (Ta), 27A (Tc)
Power dissipation600mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs2mOhm @ 13.5A, 4.5V
Gate charge (Qg) (Max) @ vgs99 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3926 pF @ 10 V