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Diodes Incorporated DMN21D2UFB-7B — Discrete Semiconductors

Diodes Incorporated DMN21D2UFB-7B

MPNDMN21D2UFB-7B
Active
$0.3900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN21D2UFB-7B specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C760mA (Ta)
Power dissipation380mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case3-UFDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs990mOhm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds27.6 pF @ 16 V