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DMN2029UVT-7

Diodes Incorporated DMN2029UVT-7

MPNDMN2029UVT-7
Active
$0.1183Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2029UVT-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C6.8A (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 6.2A, 4.5V
Gate charge (Qg) (Max) @ vgs7.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds646 pF @ 10 V