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Diodes Incorporated DMN2029USD-13 — Discrete Semiconductors

Diodes Incorporated DMN2029USD-13

MPNDMN2029USD-13
Active
$0.4200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2029USD-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C5.8A
Power - max1.2W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs18.6nC @ 8V
Input capacitance (Ciss) (Max) @ vds1171pF @ 10V