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Diodes Incorporated DMN2028UFDH-7 — Discrete Semiconductors

Diodes Incorporated DMN2028UFDH-7

MPNDMN2028UFDH-7
Active

MOSFET 2N-CH 20V 6.8A POWERDI

$0.4100Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2028UFDH-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.8A
Power - max1.1W
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Common Drain
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs8.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds151pF @ 10V