DMN2025U
Diodes Incorporated DMN2025U
MPNDMN2025U
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 5.6A (Ta) |
| Power dissipation | 800mW |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 6.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 5.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 485 pF @ 10 V |