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Diodes Incorporated DMN2024UTS-13 — Discrete Semiconductors

Diodes Incorporated DMN2024UTS-13

MPNDMN2024UTS-13
Active
$0.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2024UTS-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.2A (Ta), 15.2A (Tc)
Power - max890mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs0.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds647pF @ 10V