Skip to main content
Diodes Incorporated DMN2022UNS-13 — Discrete Semiconductors

Diodes Incorporated DMN2022UNS-13

MPNDMN2022UNS-13
Active
$0.2398Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2022UNS-13 specifications
ParameterValue
FET type2 N-Channel (Dual) Common Drain
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C10.7A (Ta)
Power - max1.2W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case8-PowerVDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs10.8mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs20.3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1870pF @ 10V