Diodes Incorporated DMN2019UTS-13
MPNDMN2019UTS-13
Active
MOSFET 2N-CH 20V 5.4A 8TSSOP
$0.4000Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 5.4A |
| Power - max | 780mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Case | 8-TSSOP (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 18.5mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.8nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 143pF @ 10V |