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Diodes Incorporated DMN2016UFX-7 — Discrete Semiconductors

Diodes Incorporated DMN2016UFX-7

MPNDMN2016UFX-7
Active
$0.2707Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2016UFX-7 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage24V
Current - continuous drain (Id) @ 25°C9.9A (Ta)
Power - max1.07W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case4-VFDFN Exposed Pad
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs14nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds950pF @ 10V