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Diodes Incorporated DMN2016LFG-7 — Discrete Semiconductors

Diodes Incorporated DMN2016LFG-7

MPNDMN2016LFG-7
Active
$0.6800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2016LFG-7 specifications
ParameterValue
FET type2 N-Channel (Dual) Common Drain
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C5.2A
Power - max770mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-PowerUDFN
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 6A, 4.5V
Gate charge (Qg) (Max) @ vgs16nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1472pF @ 10V