Diodes Incorporated DMN2015UFDE-7
MPNDMN2015UFDE-7
Active
MOSFET N-CH 20V 10.5A 6UDFN
$0.5300Ref. price · indicative, final on quote
Packaging6-PowerUDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 10.5A (Ta) |
| Power dissipation | 660mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-PowerUDFN |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 11.6mOhm @ 8.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 45.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1779 pF @ 10 V |