Diodes Incorporated DMN2014LHAB-13
MPNDMN2014LHAB-13
End of Life
$0.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta) |
| Power - max | 800mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Diodes Incorporated |
| Configuration | 2 N-Channel (Dual) |
| Case | 6-UFDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 13mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 16nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1550pF @ 10V |