Skip to main content
Diodes Incorporated DMN2011UFDF-7 — Discrete Semiconductors

Diodes Incorporated DMN2011UFDF-7

MPNDMN2011UFDF-7
Active
$0.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2011UFDF-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C14.2A (Ta)
Power dissipation2.1W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 7A, 4.5V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2248 pF @ 10 V