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Diodes Incorporated DMN2008LFU-13 — Discrete Semiconductors

Diodes Incorporated DMN2008LFU-13

MPNDMN2008LFU-13
Active
$0.2363Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2008LFU-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C14.5A
Power - max1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case6-UFDFN Exposed Pad
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs5.4mOhm @ 5.5A, 4.5V
Gate charge (Qg) (Max) @ vgs42.3nC @ 10V
Input capacitance (Ciss) (Max) @ vds1418pF @ 10V