Skip to main content
Diodes Incorporated DMN2005UFGQ-7 — Discrete Semiconductors

Diodes Incorporated DMN2005UFGQ-7

MPNDMN2005UFGQ-7
Active
$0.3902Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN2005UFGQ-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C18A (Ta), 50A (Tc)
Power dissipation1.05W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs4.6mOhm @ 13.5A, 4.5V
Gate charge (Qg) (Max) @ vgs164 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6495 pF @ 10 V