Diodes Incorporated DMN2005UFG-13
MPNDMN2005UFG-13
Active
MOSFET N-CH 20V 18.1A PWRDI3333
$0.5700Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 18.1A (Tc) |
| Power dissipation | 1.05W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.6mOhm @ 13.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 164 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6495 pF @ 10 V |