DMN2005LP4K-7

Diodes Incorporated

MOSFET N-CH 20V 200MA 3DFN

Diodes Incorporated DMN2005LP4K-7
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2005LP4K-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation400mW (Ta)
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id900mV @ 100µA
Rds on (Max) @ id, vgs1.5Ohm @ 10mA, 4V
Input capacitance (Ciss) (Max) @ vds41 pF @ 3 V
DMN2005LP4K-7
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