Diodes Incorporated DMN2005LP4K-7
MPNDMN2005LP4K-7
Active
MOSFET N-CH 20V 200MA 3DFN
$0.4700Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4V |
| Current - continuous drain (Id) @ 25°C | 200mA (Ta) |
| Power dissipation | 400mW (Ta) |
| Operating temperature | -65°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 900mV @ 100µA |
| Rds on (Max) @ id, vgs | 1.5Ohm @ 10mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 41 pF @ 3 V |