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Diodes Incorporated DMN15H310SE-13 — Discrete Semiconductors

Diodes Incorporated DMN15H310SE-13

MPNDMN15H310SE-13
Active

MOSFET N-CH 150V 2A/7.1A SOT223

$1.2000Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN15H310SE-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta), 7.1A (Tc)
Power dissipation1.9W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs310mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs8.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds405 pF @ 25 V