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DMN10H700S-13

Diodes Incorporated DMN10H700S-13

MPNDMN10H700S-13
Active
$0.0660Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN10H700S-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C700mA (Ta)
Power dissipation400mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs4.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds235 pF @ 50 V