Skip to main content
Diodes Incorporated DMN10H6D2LFDB-13 — Discrete Semiconductors

Diodes Incorporated DMN10H6D2LFDB-13

MPNDMN10H6D2LFDB-13
Active
$0.0786Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN10H6D2LFDB-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C270mA (Ta)
Power - max700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs6Ohm @ 190mA, 10V
Gate charge (Qg) (Max) @ vgs1.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds41pF @ 50V