Diodes Incorporated DMN10H220LFVW-13
MPNDMN10H220LFVW-13
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$0.1445Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount, Wettable Flank |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 2.4W (Ta), 41W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 222mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 366 pF @ 50 V |