Diodes Incorporated DMN10H170SFDE-7
MPNDMN10H170SFDE-7
Active
MOSFET N-CH 100V 2.9A 6UDFN
$0.5100Ref. price · indicative, final on quote
Packaging6-PowerUDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.9A (Ta) |
| Power dissipation | 660mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-PowerUDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1167 pF @ 25 V |