Diodes Incorporated DMN10H120SFG-7
MPNDMN10H120SFG-7
Active
MOSFET N-CH 100V 3.8A PWRDI3333
$0.6500Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.8A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 3.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 549 pF @ 50 V |