DMN10H120SFG-7
Diodes Incorporated
MOSFET N-CH 100V 3.8A PWRDI3333
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.8A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 3.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 549 pF @ 50 V |
DMN10H120SFG-7
[ALLOC] verified