Diodes Incorporated DMN10H099SFG-13
MPNDMN10H099SFG-13
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$0.2494Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.2A (Ta) |
| Power dissipation | 980mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 80mOhm @ 3.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1172 pF @ 50 V |