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Diodes Incorporated DMN1054UCB4-7 — Discrete Semiconductors

Diodes Incorporated DMN1054UCB4-7

MPNDMN1054UCB4-7
Active

MOSFET N-CH 8V 2.7A X1-WLB0808-4

$0.6400Ref. price · indicative, final on quote
Packaging4-XFBGA, WLBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN1054UCB4-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C2.7A (Ta)
Power dissipation740mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±5V
TechnologyMOSFET (Metal Oxide)
Case4-XFBGA, WLBGA
Vgs(th) (Max) @ id700mV @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs15 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds908 pF @ 6 V