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Diodes Incorporated DMN1029UFDB-13 — Discrete Semiconductors

Diodes Incorporated DMN1029UFDB-13

MPNDMN1029UFDB-13
Active
$0.1200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN1029UFDB-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage12V
Current - continuous drain (Id) @ 25°C5.6A
Power - max1.4W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 5A, 4.5V
Gate charge (Qg) (Max) @ vgs19.6nC @ 8V
Input capacitance (Ciss) (Max) @ vds914pF @ 6V