Skip to main content
Diodes Incorporated DMN1014UFDF-7 — Discrete Semiconductors

Diodes Incorporated DMN1014UFDF-7

MPNDMN1014UFDF-7
Active
$0.1123Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN1014UFDF-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C8A (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds515 pF @ 6 V