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Diodes Incorporated DMN1008UFDF-7 — Discrete Semiconductors

Diodes Incorporated DMN1008UFDF-7

MPNDMN1008UFDF-7
Active
$0.1419Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN1008UFDF-7 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C12.2A (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 5A, 4.5V
Gate charge (Qg) (Max) @ vgs23.4 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds995 pF @ 6 V