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Analog Devices MAX15019AASA+ — DC-DC Power Modules

MAX15019AASA+ Half-Bridge Gate Driver, 3A Peak, 8-SOIC-EP

MPNMAX15019AASA+
End of Life

Analog Devices MAX15019AASA+, half-bridge N-channel MOSFET driver, non-inverting, independent channels, 3A peak source/sink, 8V to 12.6V supply, bootstrap to 125V, -40°C to 150°C, 8-SOIC-EP exposed pad.

$6.27Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width) Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

MAX15019AASA+ specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 12.6V
Logic voltage - VIL, VIH0.8V, 2V
High side voltage - max (Bootstrap)125 V
Current - peak output (Source, sink)3A, 3A
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width) Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)50ns, 40ns

Product details

Half-bridge gate driver for N-channel MOSFETs

The Analog Devices MAX15019AASA+ is a dual-channel, non-inverting half-bridge gate driver designed for N-channel MOSFETs. Each of the two independent drivers delivers 3A peak source and sink current, which directly determines how fast the external MOSFET gates charge and discharge — critical for minimizing switching losses and controlling dead-time in synchronous rectifiers, DC-DC converters, and motor-drive output stages.

Housed in an 8-SOIC package with exposed pad (0.154" width, 3.90mm width body), supplier device package 8-SOIC-EP. Shipped in Tube.

Frequently asked questions

What is the gate type for MAX15019AASA+?

The driver is designed for N-channel MOSFETs only. It drives the high-side and low-side N-channel FETs in a half-bridge configuration, with the high-side gate driven via a bootstrap capacitor referenced to the switch node.