Dual 2A low-side driver with 15ns edges
The LTC3900ES8#TRPBF is a dual low-side N-channel MOSFET gate driver from Analog Devices, designed for synchronous rectification and other low-side switching applications. It delivers 2A peak source and 2A peak sink current with typical 15ns rise and fall times, which keeps switching losses manageable in the 100kHz to 500kHz range. The supply voltage spans 4.5V to 11V, covering standard 5V and 12V bias rails with margin for dropout.
The 2A peak source/sink current directly determines how fast the gate capacitance of the external MOSFET charges. For a typical 10nC gate-charge MOSFET, the 15ns rise time means the gate driver can switch it on in about 30-40ns, which is fast enough for 200-500kHz operation without excessive cross-conduction. If you're driving large paralleled MOSFETs with total gate charge above 50nC, expect the effective rise time to stretch — plan the dead time accordingly.
Supply range 4.5V to 11V
The 4.5V minimum supply means this driver can run from a 5V rail with 0.5V of headroom, or from a regulated 12V rail. It accepts both inverting and non-inverting input logic, so it can be driven directly from a PWM controller output or a microcontroller GPIO with level translation. The wide range simplifies power-rail design in multi-rail systems.
Active lifecycle, industrial temperature grade
Tape & Reel packaging for production
The 8-SOIC (0.154", 3.90mm width) package is a standard footprint, and the surface-mount mounting type fits standard reflow profiles.