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Analog Devices LTC1155IS8#PBF — Analog & Data Acquisition

LTC1155IS8#PBF Dual High-Side Gate Driver, 8-SOIC, Active

MPNLTC1155IS8#PBF
End of Life

Analog Devices LTC1155IS8#PBF dual high-side N-channel MOSFET gate driver, 4.5V–18V supply, 2 drivers, non-inverting, independent channels, -40°C to 85°C, 8-SOIC surface mount, tube.

$12.11Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

LTC1155IS8#PBF specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH0.8V, 2V
Operating temperature-40°C ~ 85°C (TA)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side

Product details

Dual high-side driver — drives two independent N-channel MOSFETs

The LTC1155IS8#PBF: This IC integrates two independent high-side gate drivers, each capable of driving an N-channel MOSFET. The driven configuration is high-side only — the gate is referenced to the supply rail, not ground, which is the typical topology for battery-protection circuits, load switches, and power-distribution systems where the load is grounded.

Package and compliance — 8-SOIC, RoHS3, tube

The supplier device package is designated 8-SO.

Frequently asked questions

What is the difference between LTC1155IS8#PBF and LTC1155IN8#PBF?

The LTC1155IN8#PBF is the through-hole DIP package (8-pin PDIP) version of the same die, while the LTC1155IS8#PBF is the surface-mount 8-SOIC variant. The LTC1155CS8#PBF is the commercial-temperature (0°C to 70°C) surface-mount sibling.