Dual N-channel MOSFET driver with 20ns edges
The Maxim Integrated ICL7667EBA+ is a dual, independent N-channel MOSFET gate driver in an 8-SOIC package. The supply range of 4.5V to 17V covers standard 5V and 12V bias rails, and the inverting input logic accepts 0.8V VIL and 2V VIH thresholds for direct interface with most PWM controllers.
A 20ns rise and fall time (typical) at the gate driver output means the MOSFET transitions quickly through the linear region, reducing switching losses. In a 100kHz to 500kHz switching regulator, this keeps the dead-time budget tight — typically 50ns to 100ns margin is enough to avoid shoot-through. The 20ns edges also limit the gate charge injection into the bootstrap circuit; a 0.1µF bootstrap capacitor is usually sufficient for a 1nF to 10nF gate load. If the layout adds more than 10nH of parasitic inductance in the gate loop, expect some ringing — a small series gate resistor (5Ω to 10Ω) cleans it up without slowing the edge much.
Rated for a supply voltage from 4.5V to 17V, the ICL7667EBA+ runs comfortably on a 5V logic rail or a 12V bias supply. The 8-SOIC package's thermal resistance is about 150°C/W (typical for SOIC-8), so at 12V supply and 1A gate charge per cycle, the self-heating stays under 10°C in normal switching.