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Analog Devices DS1230AB-100+ — DC-DC Power Modules

DS1230AB-100+ NVSRAM, 256Kbit, 100 ns, 28-EDIP

MPNDS1230AB-100+
End of Life

Maxim Integrated DS1230AB-100+, NVSRAM (Non-Volatile SRAM), 256Kbit (32K x 8), 100 ns access time, parallel interface, 4.75V–5.25V supply, 0°C–70°C, 28-EDIP through-hole package.

$28.18Ref. price · indicative, final on quote
Packaging28-DIP Module (0.600", 15.24mm)
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

DS1230AB-100+ specifications
ParameterValue
Memory typeNon-Volatile
MountingThrough Hole
Voltage4.75V ~ 5.25V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTube
TechnologyNVSRAM (Non-Volatile SRAM)
Access time100 ns
Memory size256Kbit
Memory formatNVSRAM
Case28-DIP Module (0.600\", 15.24mm)
Memory organization32K x 8
Write cycle time - word, page100ns

Product details

The Maxim Integrated DS1230AB-100+ is a 256Kbit Non-Volatile SRAM (NVSRAM) organized as 32K x 8 bits. It combines the fast read/write cycle of a standard SRAM — 100 ns access time — with internal lithium backup that retains data when the main supply drops, so no external battery or EEPROM wear-leveling is needed. The parallel interface connects directly to a microcontroller or FPGA memory bus. Typical applications include configuration storage, calibration tables, boot code shadowing, and data logging in commercial-temperature equipment such as office automation, point-of-sale terminals, and industrial controllers that do not require extended temperature range.

For a BOM line, this is a low-risk single-source part — the NVSRAM architecture is proprietary to a handful of vendors, so plan for sole-source procurement.

Frequently asked questions

What technology does DS1230AB-100+ use?

It is an NVSRAM (Non-Volatile SRAM) — a fast SRAM core with an internal lithium backup that retains data without external power.